Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center
文献类型：期刊论文
| 作者 | Cheng, GD; Huang, Q; Shen, YH; Huang, HF; Yan, L |
| 刊名 | OPTIK
 |
| 出版日期 | 2017 |
| 卷号 | 136期号:-页码:151-156 |
| ISSN号 | 0030-4026 |
| DOI | 10.1016/j.ijleo.2017.02.027 |
| 文献子类 | 期刊论文 |
| 英文摘要 | A color center in diamond which is a comparable NV-1 isoelectronic center is predicted based on first-principles electronic structure calculations. The defect consists of a substitutional sulfur and an adjacent carbon vacancy (S-V). We find that the S-V center is optically accessible with two zero-phonon line of about 1.12 and 1.22 eV. The S-V center also shares many of the characteristics of the NV-1 center in diamond. A prominent spin coherence time is predicted by combining first-principles calculations and a mean-field theory for spin hyperfine interaction, and is at the same level with that of NV-1 center in diamond. Furthermore, the neutral S-V center in diamond provides more degrees of freedom for spin manipulation than the NV-1 center in diamond. (C) 2017 Elsevier GmbH. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000403124300021 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/28874]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Cheng, GD,Huang, Q,Shen, YH,et al. Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center[J]. OPTIK,2017,136(-):151-156. |
| APA | Cheng, GD,Huang, Q,Shen, YH,Huang, HF,&Yan, L.(2017).Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center.OPTIK,136(-),151-156. |
| MLA | Cheng, GD,et al."Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center".OPTIK 136.-(2017):151-156. |
入库方式： OAI收割
来源：上海应用物理研究所
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