3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals
文献类型：期刊论文
| 作者 | Chang, C; Wu, MH; He, DS; Pei, YL; Wu, CF; Wu, XF; Yu, HL; Zhu, FY; Wang, KD; Chen, Y |
| 刊名 | SCIENCE
 |
| 出版日期 | 2018 |
| 卷号 | 360期号:6390页码:778-782 |
| 关键词 | High-thermoelectric Performance Thermal-conductivity Single-crystals Bulk Thermoelectrics Efficiency Enhancement Temperature Scattering Distortion Mechanism |
| ISSN号 | 0036-8075 |
| DOI | 10.1126/science.aaq1479 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of similar to 2.8 +/- 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties. |
| 语种 | 英语 |
| WOS记录号 | WOS:000432473500046 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/28900]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Chang, C 2.Wu, MH 3.He, DS 4.Pei, YL 5.Wu, CF 6.Wu, XF 7.Yu, HL 8.Zhu, FY 9.Wang, KD 10.Chen, Y |
| 推荐引用方式 GB/T 7714 | Chang, C,Wu, MH,He, DS,et al. 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals[J]. SCIENCE,2018,360(6390):778-782. |
| APA | Chang, C.,Wu, MH.,He, DS.,Pei, YL.,Wu, CF.,...&Zhao, LD.(2018).3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.SCIENCE,360(6390),778-782. |
| MLA | Chang, C,et al."3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals".SCIENCE 360.6390(2018):778-782. |
入库方式： OAI收割
来源：上海应用物理研究所
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