中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Adsorbate-Induced Modification of the Confining Barriers in a Quantum Box Array

文献类型:期刊论文

作者Nowakowska, S; Mazzola, F; Alberti, MN; Song, F; Voigt, T; Nowakowski, J; Wackerlin, A; Wackerlin, C; Wiss, J; Schweizer, WB
刊名ACS NANO
出版日期2018
卷号12期号:1页码:768-778
关键词Initio Molecular-dynamics Total-energy Calculations Augmented-wave Method Surface-states Temperature-dependence Nanoporous Network Electronic States Chiral Networks Hydrogen-bonds Metal-surfaces
ISSN号1936-0851
DOI10.1021/acsnano.7b07989
文献子类期刊论文
英文摘要Quantum devices depend on addressable elements, which can be modified separately and in their mutual interaction. Self-assembly at surfaces, for example, formation of a porous (metal-) organic network, provides an ideal way to manufacture arrays of identical quantum boxes, arising in this case from the confinement of the electronic (Shockley) surface state within the pores. We show that the electronic quantum box state as well as the interbox coupling can be modified locally to a varying extent by a selective choice of adsorbates, here C-60, interacting with the barrier. In view of the wealth of differently acting adsorbates, this approach allows for engineering quantum states in on-surface network architectures.
语种英语
WOS记录号WOS:000423495200082
源URL[http://ir.sinap.ac.cn/handle/331007/28921]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位1.Nowakowska, S
2.Mazzola, F
3.Alberti, MN
4.Song, F
5.Voigt, T
6.Nowakowski, J
7.Wackerlin, A
8.Wackerlin, C
9.Wiss, J
10.Schweizer, WB
推荐引用方式
GB/T 7714
Nowakowska, S,Mazzola, F,Alberti, MN,et al. Adsorbate-Induced Modification of the Confining Barriers in a Quantum Box Array[J]. ACS NANO,2018,12(1):768-778.
APA Nowakowska, S.,Mazzola, F.,Alberti, MN.,Song, F.,Voigt, T.,...&Jung, TA.(2018).Adsorbate-Induced Modification of the Confining Barriers in a Quantum Box Array.ACS NANO,12(1),768-778.
MLA Nowakowska, S,et al."Adsorbate-Induced Modification of the Confining Barriers in a Quantum Box Array".ACS NANO 12.1(2018):768-778.

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来源:上海应用物理研究所

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