Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Tai, LX; Zhu, DM; Liu, X; Yang, TY; Wang, L; Wang, R; Jiang, S; Chen, ZH; Xu, ZM; Li, XL |
| 刊名 | NANO-MICRO LETTERS
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:2页码:- |
| 关键词 | Single-crystal Graphene Heterojunction Solar-cells Hexagonal Boron-nitride High-quality Layer Growth Cvd Growth Films Catalyst Copper Surface |
| ISSN号 | 2311-6706 |
| DOI | 10.1007/s40820-017-0173-1 |
| 文献子类 | 期刊论文 |
| 英文摘要 | The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [GRAPHICS] |
| 语种 | 英语 |
| WOS记录号 | WOS:000425093800003 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/28972]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Tai, LX 2.Zhu, DM 3.Liu, X 4.Yang, TY 5.Wang, L 6.Wang, R 7.Jiang, S 8.Chen, ZH 9.Xu, ZM 10.Li, XL |
| 推荐引用方式 GB/T 7714 | Tai, LX,Zhu, DM,Liu, X,et al. Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition[J]. NANO-MICRO LETTERS,2018,10(2):-. |
| APA | Tai, LX.,Zhu, DM.,Liu, X.,Yang, TY.,Wang, L.,...&Li, XL.(2018).Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition.NANO-MICRO LETTERS,10(2),-. |
| MLA | Tai, LX,et al."Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition".NANO-MICRO LETTERS 10.2(2018):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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