Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain
文献类型：期刊论文
| 作者 | Zhao, JL; Guo, HZ; He, X; Zhang, QH; Gu, L; Li, XL; Jin, KJ; Yang, TY; Ge, C; Luo, Y |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:12页码:10211-10219 |
| 关键词 | Oxide Fuel-cells Transition-metal Oxides Phase-transformation Oxygen Vacancies Perovskite Cathode Srcoo3-delta Diffraction Co3o4 |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.8b00791 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Structure determines material's functionality, and strain tunes the structure. Tuning the coherent epitaxial strain by varying the thickness of the films is a precise route to manipulate the functional properties in the low-dimensional oxide materials. Here, to explore the effects of the coherent epitaxial strain on the properties of SrCoO2.5 thin films, thickness-dependent evolutions of the structural properties and electronic structures were investigated by X-ray diffraction, Raman-spectra, optical absorption spectra, scanning transmission electron microscopy (STEM), and first principles calculations. By increasing the thickness of the SrCoO2.5 films, the c-axis lattice constant decreases, indicating the relaxation of the coherent epitaxial strain. The energy band gap increases and the Raman spectra undergo a substantial softening with the relaxation of the coherent epitaxial strain. From the STEM results, it can be concluded that the strain causes the variation of the oxygen content in the BM-SCO2.5 films, which results in the variation of band gaps with varying the strain. First-principles calculations show that strain-induced changes in bond lengths and angles of the octahedral CoO6 and tetrahedral CoO4 cannot explain the variation band gap. Our findings offer an alternative strategy to manipulate structural and electronic properties by tuning the coherent epitaxial strain in transition-metal oxide thin films. |
| 语种 | 英语 |
| WOS记录号 | WOS:000428972700037 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/29066]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Zhao, JL 2.Guo, HZ 3.He, X 4.Zhang, QH 5.Gu, L 6.Li, XL 7.Jin, KJ 8.Yang, TY 9.Ge, C 10.Luo, Y |
| 推荐引用方式 GB/T 7714 | Zhao, JL,Guo, HZ,He, X,et al. Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(12):10211-10219. |
| APA | Zhao, JL.,Guo, HZ.,He, X.,Zhang, QH.,Gu, L.,...&Ibrahim, K.(2018).Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain.ACS APPLIED MATERIALS & INTERFACES,10(12),10211-10219. |
| MLA | Zhao, JL,et al."Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain".ACS APPLIED MATERIALS & INTERFACES 10.12(2018):10211-10219. |
入库方式： OAI收割
来源：上海应用物理研究所
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