Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires
文献类型：期刊论文
| 作者 | He, G. H.; M. M. Jiang; L. Dong; Z. Z. Zhang; B. H. Li; C. X. Shan and D. Z. Shen |
| 刊名 | Journal of Materials Chemistry C
 |
| 出版日期 | 2017 |
| 卷号 | 5期号:10 |
| 英文摘要 | One dimensional (1D) zinc oxide (ZnO) nano and microwires have been considered as one of the most promising candidates for the fabrication of novel nano and microscale electronic and optoelectronic devices. In this study, individual Ga heavily doped ZnO microwires (GZO MWs) were successfully synthesized via chemical vapor deposition methods. Bright, stable, and near-infrared light-emission from electrically biased individual GZO MWs has been achieved. Mysteriously, alternating current driven near-infrared electroluminescence (EL) devices based on individual GZO MWs can also be realized. Therefore, individual GZO MWs that can be analogous to incandescent sources, provide promising potential applications in future ultracompact near-infrared electronic and optoelectronic devices or systems. |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/58934]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | He, G. H.,M. M. Jiang,L. Dong,et al. Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires[J]. Journal of Materials Chemistry C,2017,5(10). |
| APA | He, G. H.,M. M. Jiang,L. Dong,Z. Z. Zhang,B. H. Li,&C. X. Shan and D. Z. Shen.(2017).Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires.Journal of Materials Chemistry C,5(10). |
| MLA | He, G. H.,et al."Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires".Journal of Materials Chemistry C 5.10(2017). |
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