Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure
文献类型：期刊论文
| 作者 | Yu, Q. N.; Y. Jia; W. Lu; M. Q. Wang; F. Li; J. Zhang; X. Zhang; Y. Q. Ning and J. Wu |
| 刊名 | Aip Advances
 |
| 出版日期 | 2017 |
| 卷号 | 7期号:8 |
| 英文摘要 | In this paper, an experimental approach to acquiring true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure is described. This method is based on a single edge-emitting laser chip with simple sample processing. The photoluminescence spectra are measured at both facets of the edge-emitting device and transformed to the spontaneous emission rate following the theory described here. The unusual double peaks appearing in the spontaneous emission rate spectra are observed for the InGaAs/GaAs quantum-well structure. The result is analyzed in terms of Indium-rich island and Model-Solid theories. The proposed method is suitable for electrically-pumped quantum-well laser structures, as well. (C) 2017 Author(s). |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/59402]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Yu, Q. N.,Y. Jia,W. Lu,et al. Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure[J]. Aip Advances,2017,7(8). |
| APA | Yu, Q. N..,Y. Jia.,W. Lu.,M. Q. Wang.,F. Li.,...&Y. Q. Ning and J. Wu.(2017).Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure.Aip Advances,7(8). |
| MLA | Yu, Q. N.,et al."Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure".Aip Advances 7.8(2017). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。