Nonvolatile ferroelectric domain wall memory.
文献类型：期刊论文
| 作者 | Sharma, Pankaj ; Zhang, Qi ; Sando, Daniel ; Lei, Chi Hou ; Liu, Yunya ; Li, Jiangyu ; Nagarajan, Valanoor ; Seidel, Jan |
| 刊名 | SCIENCE ADVANCES
 |
| 出版日期 | 2017 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Ferroelectric domain walls are atomically sharp topological defects that separate regions of uniform polarization. The discovery of electrical conductivity in specific types of walls gave rise to "domain wall nanoelectronics," a technology in which the wall (rather than the domain) stores information. This paradigm shift critically hinges on precise nanoengineering of reconfigurable domain walls. Using specially designed nanofabricated electrodes and scanning probe techniques, we demonstrate a prototype nonvolatile ferroelectric domain wall memory, scalable to below 100 nm, whose binary state is defined by the existence or absence of conductive walls. The device can be read out nondestructively at moderate voltages (<3 V), exhibits relatively high OFF-ON ratios (similar to 10(3)) with excellent endurance and retention characteristics, and has multilevel data storage capacity. Our work thus constitutes an important step toward integrated nanoscale ferroelectric domain wall memory devices. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/12123]  |
| 专题 | 深圳先进技术研究院_医工所 |
| 作者单位 | SCIENCE ADVANCES |
| 推荐引用方式 GB/T 7714 | Sharma, Pankaj , Zhang, Qi , Sando, Daniel ,et al. Nonvolatile ferroelectric domain wall memory.[J]. SCIENCE ADVANCES,2017. |
| APA | Sharma, Pankaj ., Zhang, Qi ., Sando, Daniel ., Lei, Chi Hou ., Liu, Yunya .,...& Seidel, Jan.(2017).Nonvolatile ferroelectric domain wall memory..SCIENCE ADVANCES. |
| MLA | Sharma, Pankaj ,et al."Nonvolatile ferroelectric domain wall memory.".SCIENCE ADVANCES (2017). |
入库方式： OAI收割
来源：深圳先进技术研究院
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