Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors
文献类型：期刊论文
| 作者 | Zhang, Lili1,2; Zheng, Qijing1,2; Xie, Yu3 ; Lan, Zhenggang3; Prezhdo, Oleg V.4,5; Saidi, Wissam A.6; Zhao, Jin1,2,7,8,9
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| 刊名 | NANO LETTERS
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| 出版日期 | 2018-03-01 |
| 卷号 | 18期号:3页码:1592-1599 |
| 关键词 | Semiconductor Doping Electron-hole Recombination Nonadiabaic Molecular Dynamics Impurity-phonon Mode |
| ISSN号 | 1530-6984 |
| DOI | 10.1021/acs.nanolett.7b03933 |
| 文献子类 | Article |
| 英文摘要 | Semiconductor doping is often proposed as an effective route to improving the solar energy conversion efficiency by engineering the band gap; however, it may also introduce electron-hole (e-h) recombination centers, where the determining element for e-h recombination is still unclear. Taking doped TiO2 as a prototype system and by using time domain ab initio nonadiabatic molecular dynamics, we find that the localization of impurity-phonon modes (IPMs) is the key parameter to determine the e-h recombination time scale. Noncompensated charge doping introduces delocalized impurity-phonon modes that induce ultrafast e-h recombination within several picoseconds. However, the recombination can be largely suppressed using charge-compensated light-mass dopants due to the localization of their IPMs. For different doping systems, the e-h recombination time is shown to depend exponentially on the IPM localization. We propose that the observation that delocalized IPMs can induce fast e-h recombination is broadly applicable and can be used in the design and synthesis of functional semiconductors with optimal dopant control. |
| WOS关键词 | CHARGE-CARRIER DYNAMICS ; TIO2 NANOTUBE ARRAYS ; VISIBLE-LIGHT ; PHOTOCATALYTIC ACTIVITY ; SURFACE SCIENCE ; HYDROGEN-PRODUCTION ; MOLECULAR-DYNAMICS ; TITANIUM-DIOXIDE ; PYXAID PROGRAM ; ANATASE TIO2 |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000427910600005 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | Ministry of Science and Technology of China(2016YFA0200604 ; National Natural Science Foundation of China(11620101003 ; Fundamental Research Funds for the Central Universities(WK3510000005) ; U.S. National Science Foundation(CHE-1213189) ; Natural Science Foundation of Shandong Province for Distinguished Young Scholars(JQ201504) ; department of Mechanical Engineering and Materials Science at the University of Pittsburgh ; US National Science Foundation(CHE-1565704) ; DOE Office of Biological and Environmental Research ; Argonne Leadership Computing Facility, which is a DOE Office of Science User Facility(DE-AC02-06CH11357) ; 2017YFA0204904) ; 21421063 ; 11704363 ; 21673266 ; 21503248) |
| 源URL | [http://ir.qibebt.ac.cn/handle/337004/10695]  |
| 专题 | 中国科学院青岛生物能源与过程研究所 |
| 通讯作者 | Zhao, Jin |
| 作者单位 | 1.Chinese Acad Sci, ICQD, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China 3.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Key Lab Biobased Mat, Qingdao 266101, Shandong, Peoples R China 4.Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USA 5.Univ Southern Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA 6.Univ Pittsburgh, Dept Mech Engn & Mat Sci, Pittsburgh, PA 15261 USA 7.Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA 8.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China 9.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Lili,Zheng, Qijing,Xie, Yu,et al. Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors[J]. NANO LETTERS,2018,18(3):1592-1599. |
| APA | Zhang, Lili.,Zheng, Qijing.,Xie, Yu.,Lan, Zhenggang.,Prezhdo, Oleg V..,...&Zhao, Jin.(2018).Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors.NANO LETTERS,18(3),1592-1599. |
| MLA | Zhang, Lili,et al."Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors".NANO LETTERS 18.3(2018):1592-1599. |
入库方式： OAI收割
来源：青岛生物能源与过程研究所
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