Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
文献类型:期刊论文
作者 | Yang, Zai-xing1,2,3; Yin, Yanxue2,3; Sun, Jiamin1,2,3; Bian, Luozhen1,2,3; Han, Ning4; Zhou, Ziyao5,6; Shu, Lei5,6; Wang, Fengyun7,8; Chen, Yunfa4; Song, Aimin2,3,9 |
刊名 | SCIENTIFIC REPORTS |
出版日期 | 2018-05-02 |
卷号 | 8 |
ISSN号 | 2045-2322 |
DOI | 10.1038/s41598-018-25209-x |
文献子类 | Article |
英文摘要 | Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of similar to 30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances. |
WOS关键词 | Core-shell Nanowires ; Chemical-vapor-deposition ; Surface Passivation ; Gasb Nanowires ; Solar-cells ; Mobility ; Superlattices ; Photoemission ; Absorption ; Monolayers |
WOS研究方向 | Science & Technology - Other Topics |
语种 | 英语 |
WOS记录号 | WOS:000431204500008 |
资助机构 | National Key R&D Program of China(2017YFA0305500 ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20170307093131123 |
源URL | [http://ir.ipe.ac.cn/handle/122111/24410] |
专题 | 过程工程研究所_多相复杂系统国家重点实验室 |
作者单位 | 1.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 2.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China 3.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China 4.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 5.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China 6.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 7.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China 8.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China 9.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England 10.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
推荐引用方式 GB/T 7714 | Yang, Zai-xing,Yin, Yanxue,Sun, Jiamin,et al. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires[J]. SCIENTIFIC REPORTS,2018,8. |
APA | Yang, Zai-xing.,Yin, Yanxue.,Sun, Jiamin.,Bian, Luozhen.,Han, Ning.,...&Ho, Johnny C..(2018).Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.SCIENTIFIC REPORTS,8. |
MLA | Yang, Zai-xing,et al."Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires".SCIENTIFIC REPORTS 8(2018). |
入库方式: OAI收割
来源:过程工程研究所
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