The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth
文献类型：期刊论文
| 作者 | Sun, Li1; Chen, Xiufang1; Yu, Wancheng1; Sun, Honggang2; Zhao, Xian1; Xu, Xiangang1; Yu, Fan3; Liu, Yunfeng3 |
| 刊名 | RSC Advances
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:103页码:100908-100915 |
| 关键词 | Atomic Force Microscopy Interfacial Energy Microelectronics Silicon Silicon Carbide |
| ISSN号 | 2046-2069 |
| DOI | 10.1039/c6ra21858j |
| 文献子类 | J |
| 英文摘要 | The exposed surfaces of the SiC substrate have a great influence on the epitaxial graphene growth and morphology and thus influence the properties of graphene-based microelectronic devices. In this work, the surface structures of the SiC substrate were determined by first principle theoretical calculations. Calculated surface energies suggested that the SiC step structure, forming on the H2etching procedure, would be reconstructed and self-ordering to expose the (1-106) facet. The inclined angle of 33.23° of the vicinal surface observed by Atomic Force Microscope (AFM) demonstrated the calculated results. The relationship between graphene growth and the surface Si-C bonding strength was revealed by calculating the formation energies of Si vacancies. Combined the calculated formation energies with Raman analysis, we concluded that the nucleation of graphene growth on the SiC substrate preferred to occur at step (1-106) surface rather than terrace (0001) surface. In addition, the single Si atom would facilitate the assembling of surface C atoms. The present theoretical and experimental work is helpful to optimize the technology of epitaxial graphene growth on the SiC substrate. © 2016 The Royal Society of Chemistry. |
| 语种 | 英语 |
| WOS记录号 | WOS:000387427700030 |
| 资助机构 | National Natural Science Foundation of China [513230013, 51402169, 51502076] ; Fundamental Research Funds for Natural Science of Shandong University [2014QY005] ; Shandong Provincial Natural Science Foundation, China [ZR2014BP005] ; China Postdoctoral Science Foundation [2013M530322] |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/8490]  |
| 专题 | 光电技术研究所_轻量化中心 |
| 作者单位 | 1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 2.250199, China 3.School of Mechanical, Electrical and Information Engineering, Shandong University, Weihai 4.264209, China 5.Institute of Optics and Electronics, Chinese Academy of Science, Chengdu 6.610209, China |
| 推荐引用方式 GB/T 7714 | Sun, Li,Chen, Xiufang,Yu, Wancheng,et al. The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth[J]. RSC Advances,2016,6(103):100908-100915. |
| APA | Sun, Li.,Chen, Xiufang.,Yu, Wancheng.,Sun, Honggang.,Zhao, Xian.,...&Liu, Yunfeng.(2016).The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth.RSC Advances,6(103),100908-100915. |
| MLA | Sun, Li,et al."The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth".RSC Advances 6.103(2016):100908-100915. |
入库方式： OAI收割
来源：光电技术研究所
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