中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study

文献类型:期刊论文

作者Yang, Junting1,2; Yan, Jiawei1,2; Wang, Shizhuo3; Ke, Youqi1,2
刊名PHYSICAL REVIEW B
卷号97期号:17
ISSN号2469-9950
文献子类期刊论文 ; Article
WOS记录号WOS:174420
出版者AMER PHYSICAL SOC
资助机构ShanghaiTech University start-up fund, "The Thousand Young Talents Plan"; ShanghaiTech University start-up fund, Shanghai "Shuguang Plan" ; ShanghaiTech University start-up fund, "The Thousand Young Talents Plan"; ShanghaiTech University start-up fund, Shanghai "Shuguang Plan"
源URL[http://ir.siom.ac.cn/handle/181231/30762]  
专题上海光学精密机械研究所_强场激光物理国家重点实验室
作者单位1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Div Condensed matter Phys & Photon Sci, Shanghai 201210, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Zhengzhou Univ Light Ind, Coll Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China
推荐引用方式
GB/T 7714
Yang, Junting,Yan, Jiawei,Wang, Shizhuo,et al. Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study[J]. PHYSICAL REVIEW B,97(17).
APA Yang, Junting,Yan, Jiawei,Wang, Shizhuo,&Ke, Youqi.
MLA Yang, Junting,et al."Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study".PHYSICAL REVIEW B 97.17

入库方式: OAI收割

来源:上海光学精密机械研究所

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