Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study
文献类型:期刊论文
作者 | Yang, Junting1,2; Yan, Jiawei1,2; Wang, Shizhuo3; Ke, Youqi1,2 |
刊名 | PHYSICAL REVIEW B
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卷号 | 97期号:17 |
ISSN号 | 2469-9950 |
文献子类 | 期刊论文 ; Article |
WOS记录号 | WOS:174420 |
出版者 | AMER PHYSICAL SOC |
资助机构 | ShanghaiTech University start-up fund, "The Thousand Young Talents Plan"; ShanghaiTech University start-up fund, Shanghai "Shuguang Plan" ; ShanghaiTech University start-up fund, "The Thousand Young Talents Plan"; ShanghaiTech University start-up fund, Shanghai "Shuguang Plan" |
源URL | [http://ir.siom.ac.cn/handle/181231/30762] ![]() |
专题 | 上海光学精密机械研究所_强场激光物理国家重点实验室 |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Div Condensed matter Phys & Photon Sci, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Zhengzhou Univ Light Ind, Coll Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China |
推荐引用方式 GB/T 7714 | Yang, Junting,Yan, Jiawei,Wang, Shizhuo,et al. Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study[J]. PHYSICAL REVIEW B,97(17). |
APA | Yang, Junting,Yan, Jiawei,Wang, Shizhuo,&Ke, Youqi. |
MLA | Yang, Junting,et al."Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study".PHYSICAL REVIEW B 97.17 |
入库方式: OAI收割
来源:上海光学精密机械研究所
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