Band alignment of AlN/beta-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Chen, Jin-Xin; Tao, Jia-Jia; Ma, Hong-Ping; Zhang, Hao1; Feng, Ji-Jun; Liu, Wen-Jun; Xia, Changtai3; Lu, Hong-Liang; Zhang, David Wei |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 卷号 | 112期号:26 |
| ISSN号 | 0003-6951 |
| 文献子类 | 期刊论文 ; Article |
| WOS记录号 | WOS:261602 |
| 出版者 | AMER INST PHYSICS |
| 资助机构 | National Key R&D Program of China [2016YFE0110700]; National Natural Science Foundation of China [U1632121, 61376008]; Natural Science Foundation of Shanghai [18ZR1405000]; State Key Laboratory of Luminescence and Applications [SKLA-2016-16] ; National Key R&D Program of China [2016YFE0110700]; National Natural Science Foundation of China [U1632121, 61376008]; Natural Science Foundation of Shanghai [18ZR1405000]; State Key Laboratory of Luminescence and Applications [SKLA-2016-16] |
| 源URL | [http://ir.siom.ac.cn/handle/181231/30466]  |
| 专题 | 上海光学精密机械研究所_中科院强激光材料重点实验室 |
| 作者单位 | 1.Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China 3.Univ Shanghai Sci & Technol, Sch Opt Elect & Comp Engn, Shanghai Key Lab Modern Opt Syst, Shanghai 200093, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab mat High Power Laser, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Jin-Xin,Tao, Jia-Jia,Ma, Hong-Ping,et al. Band alignment of AlN/beta-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy[J]. APPLIED PHYSICS LETTERS,112(26). |
| APA | Chen, Jin-Xin.,Tao, Jia-Jia.,Ma, Hong-Ping.,Zhang, Hao.,Feng, Ji-Jun.,...&Zhang, David Wei. |
| MLA | Chen, Jin-Xin,et al."Band alignment of AlN/beta-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy".APPLIED PHYSICS LETTERS 112.26 |
入库方式： OAI收割
来源：上海光学精密机械研究所
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