Surface passivation of 1550nm AlxInyAsSb avalanche photodiode
文献类型：会议论文
| 作者 | Guo, Chunyan1,2,4; Lv, Yuexi3,4; Zheng, Da'nong3,4; Sun, Yaoyao3,4; Jiang, Zhi3,4; Jiang, Dongwei3,4; Wang, Guowei3,4; Xu, Yingqiang3,4; Wang, Tao1 ; Tian, Jinshou1
|
| 出版日期 | 2018 |
| 会议日期 | 2018-10-11 |
| 会议地点 | Beijing, China |
| 卷号 | 10814 |
| DOI | 10.1117/12.2500523 |
| 英文摘要 | We report three kinds of surface passivation for AlxInyAsSb APD, which are SiO2, SiO2 after sulfuration and SU8 2005 treatments. A good sidewall profile of mesas were etch by Inductively Coupled Plasma (ICP) to 2.6μm depth. The order of dark current for device with SU8 passivation is less than-12 under the temperature of 100K. Dark current and photocurrent increase linearly with diameter of mesa. Also, the devices with different passivation methods produce photocurrent excited by incident power. The measurements are consistent with CV modeling and electric field simulations. ? 2018 SPIE. |
| 产权排序 | 1 |
| 会议录 | Optoelectronic Devices and Integration VII
 |
| 会议录出版者 | SPIE |
| 语种 | 英语 |
| ISSN号 | 0277786X;1996756X |
| ISBN号 | 9781510622265 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/30864]  |
| 专题 | 条纹相机工程中心 |
| 通讯作者 | Niu, Zhichuan |
| 作者单位 | 1.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Chinese Academy of Science, Xi'an Institute of Optics and Precision Mechanics, Xi'an; 710119, China; 2.Xi'an Jiaotong University, Xi'an; 710049, China; 3.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Science, Beijing; 100083, China; 4.College of Material Science and Optoelectronic Technology, University of Chinese Academy of Science, Beijing; 100049, China |
| 推荐引用方式 GB/T 7714 | Guo, Chunyan,Lv, Yuexi,Zheng, Da'nong,et al. Surface passivation of 1550nm AlxInyAsSb avalanche photodiode[C]. 见:. Beijing, China. 2018-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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