High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection
文献类型：期刊论文
| 作者 | Liu Hu-Lin ; Wang Xing; Tian Jin-Shou; Sai Xiao-Feng; Wei Yong-Lin; Wen Wen-Long; Wang Jun-Feng; Xu Xiang-Yan; Wang Chao; Lu Yu
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2018-01-05 |
| 卷号 | 67期号:1 |
| 关键词 | Complementary Metal Oxide Semiconductor Electron Bombareded Gain Low Light Level Imaging Uv Detection |
| ISSN号 | 1000-3290 |
| DOI | 10.7498/aps.67.20171729 |
| 其他题名 | 高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究 |
| 产权排序 | 1 |
| 英文摘要 | High resolution and high sensitive low light level imaging sensors are crucial in many applications such as astronomical observation, high energy physics, night vision and remote sensing. The electron bombarded complementary metal oxide semiconductor (EBCMOS) sensor is a novel imager in which very high gain can be produced by hitting the semiconductor with high voltage without any noise generation. In addition, it can process high-definition image with kHz frame rate. These advatages make the EBCMOS an ideal device for ultrafast single-photon imgaing. In this article, we present an EBCMOS sensor working in the ultraviolet range by combing the technology of vacuum photocathode and back illuminated CMOS together. This EBCMOS sensor can realize very high resolution in 40 mlx light illumination environment. The achieved spatial resolution is 25 lp/mm (line paris per millimeter) when the electric field intensity is 5000 V/mm. The liner relation between electric field intensity and the resolution indicates that much better perofromance can be achieved if the electric field intensity increases to a much higher value. The EBCMOS sensor developed in this paper can be directly applied to UV weak light detection, moreover it will provide a good reference for further developing the visible and near infrared sensitive EBCMOS sensors. |
| 学科主题 | Physics, Multidisciplinary |
| 语种 | 中文 |
| WOS记录号 | WOS:000425271100016 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/30758]  |
| 专题 | 条纹相机工程中心 |
| 作者单位 | Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Hu-Lin,Wang Xing,Tian Jin-Shou,et al. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection[J]. ACTA PHYSICA SINICA,2018,67(1). |
| APA | Liu Hu-Lin.,Wang Xing.,Tian Jin-Shou.,Sai Xiao-Feng.,Wei Yong-Lin.,...&Xin Li-Wei.(2018).High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection.ACTA PHYSICA SINICA,67(1). |
| MLA | Liu Hu-Lin,et al."High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection".ACTA PHYSICA SINICA 67.1(2018). |
入库方式： OAI收割
来源：西安光学精密机械研究所
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