Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes
文献类型:期刊论文
作者 | Zhao, Linna; Chen, Leilei; Yu, Guohao(于国浩); Yan, Dawei; Yang, Guofeng; Gu, Xiaofeng; Liu, Bin; Lu, Hai |
刊名 | IEEE PHOTONICS TECHNOLOGY LETTERS
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出版日期 | 2017 |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/5668] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
推荐引用方式 GB/T 7714 | Zhao, Linna,Chen, Leilei,Yu, Guohao,et al. Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2017. |
APA | Zhao, Linna.,Chen, Leilei.,Yu, Guohao.,Yan, Dawei.,Yang, Guofeng.,...&Lu, Hai.(2017).Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes.IEEE PHOTONICS TECHNOLOGY LETTERS. |
MLA | Zhao, Linna,et al."Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes".IEEE PHOTONICS TECHNOLOGY LETTERS (2017). |
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