中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

文献类型:期刊论文

作者Zhao, Linna; Chen, Leilei; Yu, Guohao(于国浩); Yan, Dawei; Yang, Guofeng; Gu, Xiaofeng; Liu, Bin; Lu, Hai
刊名IEEE PHOTONICS TECHNOLOGY LETTERS
出版日期2017
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/5668]  
专题苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式
GB/T 7714
Zhao, Linna,Chen, Leilei,Yu, Guohao,et al. Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2017.
APA Zhao, Linna.,Chen, Leilei.,Yu, Guohao.,Yan, Dawei.,Yang, Guofeng.,...&Lu, Hai.(2017).Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes.IEEE PHOTONICS TECHNOLOGY LETTERS.
MLA Zhao, Linna,et al."Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes".IEEE PHOTONICS TECHNOLOGY LETTERS (2017).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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