Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate
文献类型：期刊论文
| 作者 | Zhang, Zhili（张志利）; Song, Liang; Li, Weiyi; Fu, Kai（付凯）; Yu, Guohao（于国浩）; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5511]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 通讯作者 | Cai Y(蔡勇); Zhang BS(张宝顺) |
| 推荐引用方式 GB/T 7714 | Zhang, Zhili,Song, Liang,Li, Weiyi,et al. Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate[J]. SOLID-STATE ELECTRONICS,2017. |
| APA | Zhang, Zhili.,Song, Liang.,Li, Weiyi.,Fu, Kai.,Yu, Guohao.,...&张宝顺.(2017).Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate.SOLID-STATE ELECTRONICS. |
| MLA | Zhang, Zhili,et al."Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate".SOLID-STATE ELECTRONICS (2017). |
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