High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Chen, F; Sun, SC; Deng, XG（邓旭光）; Fu, K（付凯）; Yu, GH（于国浩）; Song, L; Hao, RH; Fan, YM（范亚明）; Cai, Y（蔡勇）; Zhang, BS（张宝顺） |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5451]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 通讯作者 | Zhang BS(张宝顺) |
| 推荐引用方式 GB/T 7714 | Chen, F,Sun, SC,Deng, XG,et al. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition[J]. AIP ADVANCES,2017. |
| APA | Chen, F.,Sun, SC.,Deng, XG.,Fu, K.,Yu, GH.,...&张宝顺.(2017).High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition.AIP ADVANCES. |
| MLA | Chen, F,et al."High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition".AIP ADVANCES (2017). |
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