High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics
文献类型：期刊论文
| 作者 | Li, Shu-Ping; Zhang, Zhi-Li(张志利）; Fu, Kai(付凯); Yu, Guo-Hao(于国浩); Cai, Yong(蔡勇); Zhang, Bao-Shun(张宝顺); Zhang BS(张宝顺) |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5446]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 通讯作者 | Zhang BS(张宝顺) |
| 推荐引用方式 GB/T 7714 | Li, Shu-Ping,Zhang, Zhi-Li,Fu, Kai,et al. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics[J],2017. |
| APA | Li, Shu-Ping.,Zhang, Zhi-Li.,Fu, Kai.,Yu, Guo-Hao.,Cai, Yong.,...&张宝顺.(2017).High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics.. |
| MLA | Li, Shu-Ping,et al."High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics".(2017). |
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