Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs
文献类型：期刊论文
| 作者 | Hao, Ronghui; Li, Weiyi; Fu, Kai（付凯）; Yu, Guohao; Song, Liang; Yuan, Jie; Li, Junshuai; Deng, Xuguang; Zhang, Xiaodong; Zhou, Qi |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5314]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Hao, Ronghui,Li, Weiyi,Fu, Kai,et al. Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs[J]. IEEE ELECTRON DEVICE LETTERS,2017. |
| APA | Hao, Ronghui.,Li, Weiyi.,Fu, Kai.,Yu, Guohao.,Song, Liang.,...&Zhang, Baoshun.(2017).Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs.IEEE ELECTRON DEVICE LETTERS. |
| MLA | Hao, Ronghui,et al."Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs".IEEE ELECTRON DEVICE LETTERS (2017). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。