Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
文献类型：期刊论文
| 作者 | Huang, Jun（黄俊）; Niu, Mu Tong（牛牧童）; Zhang, Ji Cai（张纪才）; Wang, Wei; Wang, Jian Feng（王建峰）; Xu, Ke（徐科） |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5596]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Huang, Jun,Niu, Mu Tong,Zhang, Ji Cai,et al. Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer[J]. JOURNAL OF CRYSTAL GROWTH,2017. |
| APA | Huang, Jun,Niu, Mu Tong,Zhang, Ji Cai,Wang, Wei,Wang, Jian Feng,&Xu, Ke.(2017).Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer.JOURNAL OF CRYSTAL GROWTH. |
| MLA | Huang, Jun,et al."Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer".JOURNAL OF CRYSTAL GROWTH (2017). |
入库方式： OAI收割
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