Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy
文献类型：期刊论文
| 作者 | He, Shunyu; Xu, Yu; Qi, Lin; Li, Zongyao; Cao, Bing; Wang, Chinhua; Zhang, Jicai(张纪才); Wang, Jianfeng(王建峰); Xu, Ke(徐科) |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5426]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | He, Shunyu,Xu, Yu,Qi, Lin,et al. Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017. |
| APA | He, Shunyu.,Xu, Yu.,Qi, Lin.,Li, Zongyao.,Cao, Bing.,...&Xu, Ke.(2017).Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS. |
| MLA | He, Shunyu,et al."Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS (2017). |
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