中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC

文献类型:期刊论文

作者Xu, Yu(徐俞); Cao, Bing; Li, Zongyao; Cai, Demin; Zhang, Yumin; Ren, Guoqiang; Wang, Jianfeng(王建峰); Shi, Lin(石林); Wang, Chinhua; Xu, Ke(徐科)
刊名ACS Applied Materials and Interfaces
出版日期2017
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/5425]  
专题苏州纳米技术与纳米仿生研究所_测试分析平台
通讯作者Xu K(徐科)
推荐引用方式
GB/T 7714
Xu, Yu,Cao, Bing,Li, Zongyao,et al. Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC[J]. ACS Applied Materials and Interfaces,2017.
APA Xu, Yu.,Cao, Bing.,Li, Zongyao.,Cai, Demin.,Zhang, Yumin.,...&徐科.(2017).Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC.ACS Applied Materials and Interfaces.
MLA Xu, Yu,et al."Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC".ACS Applied Materials and Interfaces (2017).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。