Unintentional gallium incorporation in InGaN layers during epitaxial growth
文献类型：期刊论文
| 作者 | Zhou, Kun; Ren, Huaijin; Ikeda, Masao; Liu, Jianping(刘建平); Ma, Yi; Gao, Songxin; Tang, Chun; Li, Deyao(李德尧); Zhang, Liquan(张利群); Yang, Hui(杨辉) |
| 刊名 | SUPERLATTICES AND MICROSTRUCTURES
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| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5676]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhou, Kun,Ren, Huaijin,Ikeda, Masao,et al. Unintentional gallium incorporation in InGaN layers during epitaxial growth[J]. SUPERLATTICES AND MICROSTRUCTURES,2017. |
| APA | Zhou, Kun.,Ren, Huaijin.,Ikeda, Masao.,Liu, Jianping.,Ma, Yi.,...&Yang, Hui.(2017).Unintentional gallium incorporation in InGaN layers during epitaxial growth.SUPERLATTICES AND MICROSTRUCTURES. |
| MLA | Zhou, Kun,et al."Unintentional gallium incorporation in InGaN layers during epitaxial growth".SUPERLATTICES AND MICROSTRUCTURES (2017). |
入库方式： OAI收割
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