Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures
文献类型：期刊论文
| 作者 | Zhang, Feng（张峰）; Ikeda, Masao; Zhang, Shuming（张书明）; Liu, Jianping（刘建平）; Tian, Aiqin（田爱琴); Wen, Pengyan(温鹏雁）; Cheng, Yang（程洋）; Yang, Hui（杨辉）; Ikeda, M |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5661]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Ikeda, M |
| 推荐引用方式 GB/T 7714 | Zhang, Feng,Ikeda, Masao,Zhang, Shuming,et al. Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures[J]. JOURNAL OF CRYSTAL GROWTH,2017. |
| APA | Zhang, Feng.,Ikeda, Masao.,Zhang, Shuming.,Liu, Jianping.,Tian, Aiqin.,...&Ikeda, M .(2017).Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures.JOURNAL OF CRYSTAL GROWTH. |
| MLA | Zhang, Feng,et al."Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures".JOURNAL OF CRYSTAL GROWTH (2017). |
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