Thermal degradation of InGaN/GaN quantum wells in blue laser diode structure during the epitaxial growth
文献类型：期刊论文
| 作者 | Zhou, Kun(周鲲); Ikeda, Massao; Liu, Jianping(刘建平); Li, Zengcheng(李增成); Ma, Yi; Gao, Songxin; Ren, Huaijin; Tang, Chun; Sun, Yi(孙逸); Sun, Qian(孙钱) |
| 刊名 | Proceedings of SPIE - The International Society for Optical Engineering
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5660]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Ikeda, M; Liu, JP（刘建平） |
| 推荐引用方式 GB/T 7714 | Zhou, Kun,Ikeda, Massao,Liu, Jianping,et al. Thermal degradation of InGaN/GaN quantum wells in blue laser diode structure during the epitaxial growth[J]. Proceedings of SPIE - The International Society for Optical Engineering,2017. |
| APA | Zhou, Kun.,Ikeda, Massao.,Liu, Jianping.,Li, Zengcheng.,Ma, Yi.,...&Liu, JP.(2017).Thermal degradation of InGaN/GaN quantum wells in blue laser diode structure during the epitaxial growth.Proceedings of SPIE - The International Society for Optical Engineering. |
| MLA | Zhou, Kun,et al."Thermal degradation of InGaN/GaN quantum wells in blue laser diode structure during the epitaxial growth".Proceedings of SPIE - The International Society for Optical Engineering (2017). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。