The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
文献类型：期刊论文
| 作者 | Ji, Lian（季莲）; Tan, Ming（谭明）; Ding, Chao; Honda, Kazuki; Harasawa, Ryo; Yasue, Yuya; Wu, Yuanyuan; Dai, Pan（代盼）; Tackeuchi, Atsushi; Bian, Lifeng（边历峰） |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5658]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Lu SL(陆书龙) |
| 推荐引用方式 GB/T 7714 | Ji, Lian,Tan, Ming,Ding, Chao,et al. The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device[J]. JOURNAL OF CRYSTAL GROWTH,2017. |
| APA | Ji, Lian.,Tan, Ming.,Ding, Chao.,Honda, Kazuki.,Harasawa, Ryo.,...&陆书龙.(2017).The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device.JOURNAL OF CRYSTAL GROWTH. |
| MLA | Ji, Lian,et al."The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device".JOURNAL OF CRYSTAL GROWTH (2017). |
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