Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
文献类型：期刊论文
| 作者 | Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Li, Xiang; Liang, Feng; Liu, Wei; Liu, Shuangtao |
| 刊名 | IEEE PHOTONICS JOURNAL
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5551]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang, Jing,Zhao, Degang,Jiang, Desheng,et al. Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes[J]. IEEE PHOTONICS JOURNAL,2017. |
| APA | Yang, Jing.,Zhao, Degang.,Jiang, Desheng.,Chen, Ping.,Zhu, Jianjun.,...&Li, Mo.(2017).Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes.IEEE PHOTONICS JOURNAL. |
| MLA | Yang, Jing,et al."Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes".IEEE PHOTONICS JOURNAL (2017). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。