中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

文献类型:期刊论文

作者Liang, Feng; Zhao, De-Gang; Jiang, De-Sheng; Liu, Zong-Shun; Zhu, Jian-Jun; Chen, Ping; Yang, Jing; Liu, Wei; Liu, Shuang-Tao; Xing, Yao
刊名CHINESE PHYSICS B
出版日期2017
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/5546]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Liang, Feng,Zhao, De-Gang,Jiang, De-Sheng,et al. Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide[J]. CHINESE PHYSICS B,2017.
APA Liang, Feng.,Zhao, De-Gang.,Jiang, De-Sheng.,Liu, Zong-Shun.,Zhu, Jian-Jun.,...&Du, Guo-Tong.(2017).Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide.CHINESE PHYSICS B.
MLA Liang, Feng,et al."Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide".CHINESE PHYSICS B (2017).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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