中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical characterization of InGaN/GaN quantum well active region of green laser diodes

文献类型:期刊论文

作者Tian, Aiqin(田爱琴); Liu, Jianping(刘建平); Liqun, Zhang(张利群); Ikeda, Masao; Fan, Xiaowang; Shuming, Zhang(张书明); Li, Deyao(李德尧); Feng, Zhang; Wen, Pengyan(温鹏雁); Yang, Cheng(程洋)
刊名Applied Physics Express
出版日期2017
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/5545]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
通讯作者Liu JP(刘建平)
推荐引用方式
GB/T 7714
Tian, Aiqin,Liu, Jianping,Liqun, Zhang,et al. Optical characterization of InGaN/GaN quantum well active region of green laser diodes[J]. Applied Physics Express,2017.
APA Tian, Aiqin.,Liu, Jianping.,Liqun, Zhang.,Ikeda, Masao.,Fan, Xiaowang.,...&刘建平.(2017).Optical characterization of InGaN/GaN quantum well active region of green laser diodes.Applied Physics Express.
MLA Tian, Aiqin,et al."Optical characterization of InGaN/GaN quantum well active region of green laser diodes".Applied Physics Express (2017).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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