Optical characterization of InGaN/GaN quantum well active region of green laser diodes
文献类型:期刊论文
作者 | Tian, Aiqin(田爱琴); Liu, Jianping(刘建平); Liqun, Zhang(张利群); Ikeda, Masao; Fan, Xiaowang; Shuming, Zhang(张书明); Li, Deyao(李德尧); Feng, Zhang; Wen, Pengyan(温鹏雁); Yang, Cheng(程洋) |
刊名 | Applied Physics Express
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出版日期 | 2017 |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/5545] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
通讯作者 | Liu JP(刘建平) |
推荐引用方式 GB/T 7714 | Tian, Aiqin,Liu, Jianping,Liqun, Zhang,et al. Optical characterization of InGaN/GaN quantum well active region of green laser diodes[J]. Applied Physics Express,2017. |
APA | Tian, Aiqin.,Liu, Jianping.,Liqun, Zhang.,Ikeda, Masao.,Fan, Xiaowang.,...&刘建平.(2017).Optical characterization of InGaN/GaN quantum well active region of green laser diodes.Applied Physics Express. |
MLA | Tian, Aiqin,et al."Optical characterization of InGaN/GaN quantum well active region of green laser diodes".Applied Physics Express (2017). |
入库方式: OAI收割
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