New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode
文献类型：期刊论文
| 作者 | Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao |
| 刊名 | OPTICS AND LASER TECHNOLOGY
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| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5534]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Liang, Feng,Zhao, Degang,Jiang, Desheng,et al. New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode[J]. OPTICS AND LASER TECHNOLOGY,2017. |
| APA | Liang, Feng.,Zhao, Degang.,Jiang, Desheng.,Liu, Zongshun.,Zhu, Jianjun.,...&Li, Mo.(2017).New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode.OPTICS AND LASER TECHNOLOGY. |
| MLA | Liang, Feng,et al."New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode".OPTICS AND LASER TECHNOLOGY (2017). |
入库方式： OAI收割
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