Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3
文献类型：期刊论文
| 作者 | Yang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Liang, F.; Li, X.; Liu, S. T. |
| 刊名 | SUPERLATTICES AND MICROSTRUCTURES
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| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5473]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang, J.,Zhao, D. G.,Jiang, D. S.,et al. Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3[J]. SUPERLATTICES AND MICROSTRUCTURES,2017. |
| APA | Yang, J..,Zhao, D. G..,Jiang, D. S..,Chen, P..,Zhu, J. J..,...&Yang, H..(2017).Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3.SUPERLATTICES AND MICROSTRUCTURES. |
| MLA | Yang, J.,et al."Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3".SUPERLATTICES AND MICROSTRUCTURES (2017). |
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