中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement

文献类型:期刊论文

作者Liu, Wei; Zhao, Degang; Jiang, Desheng; Chen, Ping; Shi, Dongping; Liu, Zongshun; Zhu, Jianjun; Yang, Jing; Li, Xiang; Liang, Feng
刊名MATERIALS RESEARCH EXPRESS
出版日期2017
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/5472]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Liu, Wei,Zhao, Degang,Jiang, Desheng,et al. Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement[J]. MATERIALS RESEARCH EXPRESS,2017.
APA Liu, Wei.,Zhao, Degang.,Jiang, Desheng.,Chen, Ping.,Shi, Dongping.,...&Zhang, Jian.(2017).Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement.MATERIALS RESEARCH EXPRESS.
MLA Liu, Wei,et al."Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement".MATERIALS RESEARCH EXPRESS (2017).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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