Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer
文献类型：期刊论文
| 作者 | Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5465]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Liu JP(刘建平) |
| 推荐引用方式 GB/T 7714 | Liang, Feng,Zhao, Degang,Jiang, Desheng,et al. Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer[J]. JOURNAL OF CRYSTAL GROWTH,2017. |
| APA | Liang, Feng.,Zhao, Degang.,Jiang, Desheng.,Liu, Zongshun.,Zhu, Jianjun.,...&刘建平.(2017).Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer.JOURNAL OF CRYSTAL GROWTH. |
| MLA | Liang, Feng,et al."Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer".JOURNAL OF CRYSTAL GROWTH (2017). |
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