Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region
文献类型：期刊论文
| 作者 | Tian, Aiqin(田爱琴); Liu, Jianping(刘建平); Zhang, Liqun(张利群); Li, Zengcheng(李增成); Ikeda, Masao; Zhang, Shuming(张书明); Li, Deyao(李德尧); Wen, Pengyan(温鹏雁); Zhang, Feng（张峰）; Cheng, Yang（程洋) |
| 刊名 | OPTICS EXPRESS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5423]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Liu JP(刘建平) |
| 推荐引用方式 GB/T 7714 | Tian, Aiqin,Liu, Jianping,Zhang, Liqun,et al. Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region[J]. OPTICS EXPRESS,2017. |
| APA | Tian, Aiqin.,Liu, Jianping.,Zhang, Liqun.,Li, Zengcheng.,Ikeda, Masao.,...&刘建平.(2017).Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region.OPTICS EXPRESS. |
| MLA | Tian, Aiqin,et al."Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region".OPTICS EXPRESS (2017). |
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