Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes
文献类型：期刊论文
| 作者 | Chen, P.; Zhao, D. G.; Jiang, D. S.; Long, H.; Li, M.; Yang, J.; Zhu, J. J.; Liu, Z. S.; Li, X. J.; Liu, W. |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5366]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Chen, P.,Zhao, D. G.,Jiang, D. S.,et al. Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes[J]. AIP ADVANCES,2017. |
| APA | Chen, P..,Zhao, D. G..,Jiang, D. S..,Long, H..,Li, M..,...&Yang, H..(2017).Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes.AIP ADVANCES. |
| MLA | Chen, P.,et al."Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes".AIP ADVANCES (2017). |
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