Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence
文献类型：期刊论文
| 作者 | Wen, Pengyan（温鹏雁）; Liu, Jianping（刘建平）; Zhang, Shuming（张书明）; Zhang, Liqun（张利群）; Ikeda, Masao; Li, Deyao（李德尧）; Tian, Aiqin（田爱琴）; Zhang, Feng（张峰）; Cheng, Yang（程洋）; Zhou, Wei |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5305]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 通讯作者 | Liu JP(刘建平) |
| 推荐引用方式 GB/T 7714 | Wen, Pengyan,Liu, Jianping,Zhang, Shuming,et al. Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence[J]. APPLIED PHYSICS LETTERS,2017. |
| APA | Wen, Pengyan.,Liu, Jianping.,Zhang, Shuming.,Zhang, Liqun.,Ikeda, Masao.,...&刘建平.(2017).Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence.APPLIED PHYSICS LETTERS. |
| MLA | Wen, Pengyan,et al."Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence".APPLIED PHYSICS LETTERS (2017). |
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