Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers
文献类型：期刊论文
| 作者 | He, Yang（何洋）; Sun, Yurun（孙玉润）; Zhao, Yongming（赵勇明); Yu, Shuzhen(于淑珍）; Dong, Jianrong（董建荣）; Dong JR(董建荣) |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5319]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 通讯作者 | Dong JR(董建荣) |
| 推荐引用方式 GB/T 7714 | He, Yang,Sun, Yurun,Zhao, Yongming,et al. Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017. |
| APA | He, Yang,Sun, Yurun,Zhao, Yongming,Yu, Shuzhen,Dong, Jianrong,&董建荣.(2017).Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. |
| MLA | He, Yang,et al."Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2017). |
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