The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics
文献类型：期刊论文
| 作者 | Li, Yaqian; Ji, Lian; Lu, Shulong（陆书龙）; Ding, Chao; Zhou, Jianqiu |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5655]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Li, Yaqian,Ji, Lian,Lu, Shulong,et al. The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics[J]. JOURNAL OF APPLIED PHYSICS,2017. |
| APA | Li, Yaqian,Ji, Lian,Lu, Shulong,Ding, Chao,&Zhou, Jianqiu.(2017).The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics.JOURNAL OF APPLIED PHYSICS. |
| MLA | Li, Yaqian,et al."The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics".JOURNAL OF APPLIED PHYSICS (2017). |
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