Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness
文献类型：期刊论文
| 作者 | Shi, Xiangyang; Wu, Yuanyuan(吴渊源); Wang, Ding; Su, Juan; Liu, Jie; Yang, Wenxian(杨文献); Xiao, Meng; Tan, Wei; Lu, Shulong(陆书龙); Zhang, Jian |
| 刊名 | Superlattices and Microstructures
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5382]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 通讯作者 | Lu SL(陆书龙) |
| 推荐引用方式 GB/T 7714 | Shi, Xiangyang,Wu, Yuanyuan,Wang, Ding,et al. Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness[J]. Superlattices and Microstructures,2017. |
| APA | Shi, Xiangyang.,Wu, Yuanyuan.,Wang, Ding.,Su, Juan.,Liu, Jie.,...&陆书龙.(2017).Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness.Superlattices and Microstructures. |
| MLA | Shi, Xiangyang,et al."Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness".Superlattices and Microstructures (2017). |
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