Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
文献类型：期刊论文
| 作者 | Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Fan, Jie; Shi, Jingyuan; Wei, Ke; Zheng, Yingkui; Gao, Hongwei |
| 刊名 | IEEE Transactions on Electron Devices
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5674]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 推荐引用方式 GB/T 7714 | Huang, Sen,Liu, Xinyu,Wang, Xinhua,et al. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices[J]. IEEE Transactions on Electron Devices,2017. |
| APA | Huang, Sen.,Liu, Xinyu.,Wang, Xinhua.,Kang, Xuanwu.,Zhang, Jinhan.,...&Chen, Kevin J..(2017).Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.IEEE Transactions on Electron Devices. |
| MLA | Huang, Sen,et al."Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices".IEEE Transactions on Electron Devices (2017). |
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