Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment
文献类型：期刊论文
| 作者 | Zhong, Yaozong; Yu Zhou; Gao, Hongwei（高宏伟）; Dai, Shujun（戴淑君）; He, Junlei（何俊蕾）; Feng, Meixin（冯美鑫）; Qian Sun（孙钱）; Zhang, Jijun; Zhao, Yanfei; An DingSun（丁孙安） |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5618]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 通讯作者 | Sun Q(孙钱); Zhou Y(周宇) |
| 推荐引用方式 GB/T 7714 | Zhong, Yaozong,Yu Zhou,Gao, Hongwei,et al. Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment[J]. APPLIED SURFACE SCIENCE,2017. |
| APA | Zhong, Yaozong.,Yu Zhou.,Gao, Hongwei.,Dai, Shujun.,He, Junlei.,...&周宇.(2017).Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment.APPLIED SURFACE SCIENCE. |
| MLA | Zhong, Yaozong,et al."Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment".APPLIED SURFACE SCIENCE (2017). |
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