p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process
文献类型：期刊论文
| 作者 | Zhou, Yu（周宇）; Zhong, Yaozong; Gao, Hongwei（高宏伟）; Dai, Shujun; He, Junlei; Feng, Meixin（冯美鑫）; Zhao, Yanfei; Sun, Qian（孙钱）; An Dingsun（丁孙安）; Yang, Hui（杨辉） |
| 刊名 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5556]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 通讯作者 | Sun Q(孙钱) |
| 推荐引用方式 GB/T 7714 | Zhou, Yu,Zhong, Yaozong,Gao, Hongwei,et al. p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2017. |
| APA | Zhou, Yu.,Zhong, Yaozong.,Gao, Hongwei.,Dai, Shujun.,He, Junlei.,...&孙钱.(2017).p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. |
| MLA | Zhou, Yu,et al."p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2017). |
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