High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)
文献类型：期刊论文
| 作者 | Li, Zengcheng（李增成）; Liu, Legong; Huang, Yingnan; Sun, Qian（孙钱）; Feng, Meixin（冯美鑫）; Zhou, Yu（周宇）; Zhao, Hanmin; Yang, Hui（杨辉） |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5450]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 推荐引用方式 GB/T 7714 | Li, Zengcheng,Liu, Legong,Huang, Yingnan,et al. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)[J]. APPLIED PHYSICS EXPRESS,2017. |
| APA | Li, Zengcheng.,Liu, Legong.,Huang, Yingnan.,Sun, Qian.,Feng, Meixin.,...&Yang, Hui.(2017).High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111).APPLIED PHYSICS EXPRESS. |
| MLA | Li, Zengcheng,et al."High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)".APPLIED PHYSICS EXPRESS (2017). |
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