a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors
文献类型：期刊论文
| 作者 | Song, Weidong; Wang, Rapeng; Wang, Xingfu; Guo, Dexiao; Chen, Hang; Zhu, Yuntao; Liu, Liu; Zhou, Yu（周宇）; Sun, Qian（孙钱）; Wang, Li |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5287]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 推荐引用方式 GB/T 7714 | Song, Weidong,Wang, Rapeng,Wang, Xingfu,et al. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors[J]. ACS APPLIED MATERIALS & INTERFACES,2017. |
| APA | Song, Weidong.,Wang, Rapeng.,Wang, Xingfu.,Guo, Dexiao.,Chen, Hang.,...&Li, Shuti.(2017).a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.ACS APPLIED MATERIALS & INTERFACES. |
| MLA | Song, Weidong,et al."a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors".ACS APPLIED MATERIALS & INTERFACES (2017). |
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