Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications
文献类型：期刊论文
| 作者 | Ding, XZ; Miao, B; Gu, ZQ; Wu, BJ; Hu, YM; Wang, H; Zhang, J(张鉴); Wu, DM(吴东岷); Lu, WH; Li, JD(李加东) |
| 刊名 | RSC ADVANCES
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5444]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米研究国际实验室_吴东岷团队 |
| 通讯作者 | Wu DM(吴东岷); Li JD(李加东) |
| 推荐引用方式 GB/T 7714 | Ding, XZ,Miao, B,Gu, ZQ,et al. Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications[J]. RSC ADVANCES,2017. |
| APA | Ding, XZ.,Miao, B.,Gu, ZQ.,Wu, BJ.,Hu, YM.,...&李加东.(2017).Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications.RSC ADVANCES. |
| MLA | Ding, XZ,et al."Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications".RSC ADVANCES (2017). |
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