Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility
文献类型：期刊论文
| 作者 | Xu, Yijun; Yuan, Jian; Zhang, Kai（张凯）; Hou, Yuan（候远）; Sun, Qiu; Yao, Yingming; Li, Shaojuan; Bao, Qiaoliang; Zhang, Han; Zhang, Yuegang（张跃钢） |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2017 |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5398]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米研究国际实验室_张凯团队 |
| 通讯作者 | Zhang K(张凯); Zhang YG(张跃钢) |
| 推荐引用方式 GB/T 7714 | Xu, Yijun,Yuan, Jian,Zhang, Kai,et al. Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility[J]. ADVANCED FUNCTIONAL MATERIALS,2017. |
| APA | Xu, Yijun.,Yuan, Jian.,Zhang, Kai.,Hou, Yuan.,Sun, Qiu.,...&张跃钢.(2017).Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility.ADVANCED FUNCTIONAL MATERIALS. |
| MLA | Xu, Yijun,et al."Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility".ADVANCED FUNCTIONAL MATERIALS (2017). |
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