Excellent Passivation of Silicon Surfaces by Thin Films of Electron-Beam-Processed Titanium Dioxide
文献类型:期刊论文
作者 | Ling, Zhaoheng; He, Jian; He, Xiaoyong; Liao, Mingdun; Liu, Peipei; Yang, Zhenhai; Ye, Jichun; Gao, Pingqi |
刊名 | IEEE JOURNAL OF PHOTOVOLTAICS
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出版日期 | 2017 |
卷号 | 7期号:6页码:1551-1555 |
ISSN号 | 2156-3381 |
英文摘要 | Dielectric of a titanium dioxide thin film is currently re-emerging as a passivating material for high-efficiency crystalline silicon (c-Si) solar cells, owing to its good passivation quality and appropriate band offset when in contact with c-Si. Here, we demonstrate effective passivation on c-Si substrates by electron-beam-processed titanium oxide layers, which are obtained by low-temperature thermal oxidation of predeposited pure titanium thin films. A derived titanium oxide layer by 3.5-nm titanium at 250 degrees C yields a surface recombination velocity down to 16 cm/s. Structural characterizations reveal that the resultant oxide layers are amorphous titanium dioxide. The passivation property is attributed to Si-O-Ti bonding at the Si-titanium dioxide interface as well as to the presence of an interfacial silicon dioxide layer. The easy processing and high-level passivation capability make these titanium dioxide thin films highly desirable to serve as a good passivating choice toward high-efficiency c-Si solar cells. |
公开日期 | 2017-12-25 |
源URL | [http://ir.nimte.ac.cn/handle/174433/13536] ![]() |
专题 | 2017专题 |
推荐引用方式 GB/T 7714 | Ling, Zhaoheng,He, Jian,He, Xiaoyong,et al. Excellent Passivation of Silicon Surfaces by Thin Films of Electron-Beam-Processed Titanium Dioxide[J]. IEEE JOURNAL OF PHOTOVOLTAICS,2017,7(6):1551-1555. |
APA | Ling, Zhaoheng.,He, Jian.,He, Xiaoyong.,Liao, Mingdun.,Liu, Peipei.,...&Gao, Pingqi.(2017).Excellent Passivation of Silicon Surfaces by Thin Films of Electron-Beam-Processed Titanium Dioxide.IEEE JOURNAL OF PHOTOVOLTAICS,7(6),1551-1555. |
MLA | Ling, Zhaoheng,et al."Excellent Passivation of Silicon Surfaces by Thin Films of Electron-Beam-Processed Titanium Dioxide".IEEE JOURNAL OF PHOTOVOLTAICS 7.6(2017):1551-1555. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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