Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor
文献类型：期刊论文
| 作者 | Wen, Juan; Zhu, Li Qiang; Fu, Yang Ming; Xiao, Hui; Guo, Li Qiang; Wan, Qing |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2017 |
| 卷号 | 9期号:42页码:37064-37069 |
| ISSN号 | 1944-8244 |
| 英文摘要 | Ion coupling has provided an additional method to modulate electric properties for solid-state materials. Here, phosphorosilicate glass (PSG)-based electrolyte gated protonic/electronic coupled indium-tin-oxide electric-double-layer (EDL) transistors are fabricated. The oxide transistor exhibits good electrical performances due to an extremely strong proton gating behavior for the electrolyte. With interfacial electrochemical doping, channel conductances of the oxide EDL transistor can be regulated to different levels, corresponding to different initial synaptic weights. Thus, activity dependent synaptic responses such as excitatory postsynaptic current, paired-pulse facilitation, and high-pass filtering are discussed in detail. The proposed proton conductor gated oxide EDL synaptic transistors with activity dependent synaptic plasticities may act as fundamental building blocks for neuromorphic system applications. |
| 公开日期 | 2017-12-25 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/13567]  |
| 专题 | 2017专题 |
| 推荐引用方式 GB/T 7714 | Wen, Juan,Zhu, Li Qiang,Fu, Yang Ming,et al. Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(42):37064-37069. |
| APA | Wen, Juan,Zhu, Li Qiang,Fu, Yang Ming,Xiao, Hui,Guo, Li Qiang,&Wan, Qing.(2017).Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor.ACS APPLIED MATERIALS & INTERFACES,9(42),37064-37069. |
| MLA | Wen, Juan,et al."Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor".ACS APPLIED MATERIALS & INTERFACES 9.42(2017):37064-37069. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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