Low indium content In-Zn-O system towards transparent conductive films: structure, properties and comparison with AZO and GZO
文献类型：期刊论文
| 作者 | Zhao, Xunna; Li, Jia; Yang, Ye; Zhu, Chaoting; Huang, Jinhua; Duan, Juanmei; Lu, Yuehui; Lan, Pinjun; Song, Weijie |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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| 出版日期 | 2017 |
| 卷号 | 28期号:18页码:13297-13302 |
| ISSN号 | 0957-4522 |
| 英文摘要 | In this work, low content indium doped zinc oxide (IZO) thin films were deposited on glass substrates by RF magnetron sputtering using IZO ceramic targets with the In2O3 doping content of 2, 6, and 10 wt%, respectively. The influences of In2O3 doping content and substrate temperature on the structure and morphology, electrical and optical properties, and environmental stability of IZO thin films were investigated. It was found that the 6 wt% doped IZO thin film deposited at 150 A degrees C exhibited the best crystal quality and the lowest resistivity of 9.87 x 10(-4) Omega cm. The corresponding Hall mobility and carrier densities were 9.20 cm(2) V-1 s(-1) and 6.90 x 10(20) cm(-3), respectively. Compared with 2 wt% Al2O3 doped ZnO and 5 wt% Ga2O3 doped ZnO thin films, IZO thin film with the In2O3 doping content of 6 wt% featured the lowest surface roughness of 1.3 nm. It also showed the smallest degradation with the sheet resistance increased only about 4.4% at a temperature of 121 A degrees C, a relative humidity of 97% for 30 h. IZO thin film with 6 wt% In2O3 doping also showed the smallest deterioration with the sheet resistance increased only about 2.8 times after heating at 500 A degrees C for 30 min in air. The results suggested that low indium content doped ZnO thin films might meet practical requirement in environmental stability needed optoelectronic devices. |
| 公开日期 | 2017-12-25 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/13642]  |
| 专题 | 2017专题 |
| 推荐引用方式 GB/T 7714 | Zhao, Xunna,Li, Jia,Yang, Ye,et al. Low indium content In-Zn-O system towards transparent conductive films: structure, properties and comparison with AZO and GZO[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(18):13297-13302. |
| APA | Zhao, Xunna.,Li, Jia.,Yang, Ye.,Zhu, Chaoting.,Huang, Jinhua.,...&Song, Weijie.(2017).Low indium content In-Zn-O system towards transparent conductive films: structure, properties and comparison with AZO and GZO.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28(18),13297-13302. |
| MLA | Zhao, Xunna,et al."Low indium content In-Zn-O system towards transparent conductive films: structure, properties and comparison with AZO and GZO".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28.18(2017):13297-13302. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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